| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device in which a barrier film and a seed film having a given film thickness are formed at a side wall of a via hole and a trench even if the shapes of the via hole and trench vary. SOLUTION: The method manufactures a semiconductor device including a conductive film having a given film thickness at a side wall of a recess formed on an insulation film. The method includes the process of forming the recess on the insulation film formed on a semiconductor substrate. Here, the recess is a general term for the via hole and trench. The method further includes the process of forming the conductive film on the insulation film formed with the recess. At that time, the conductive film is formed to have a film thickness to be deposited on the recess using a sputtering method. In other words, the conductive film is formed to have a film thickness that is calculated based on a project area of the side wall of the recess when the depth of the recess and the recess are viewed from the top surface, and that is deposited on the top surface of the insulation film formed with the recess thereon. More specifically, deposition is performed while considering variations in the shapes based on the project area of the via hole and trench. COPYRIGHT: (C)2009,JPO&INPIT |
