| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film transistor with excellent electrical properties, and a manufacturing methods of a display device having the same. SOLUTION: A gate insulating film is formed on a gate electrode. A semiconductor film having a microcrystalline semiconductor and an amorphous semiconductor is formed on the gate insulating film. The amorphous semiconductor of the semiconductor film is selectively eliminated and the microcrystalline semiconductor is left. With the microcrystalline semiconductor as a seed, a microcrystalline semiconductor film is formed by crystal growth using deposition gas containing silicon or germanium to improve crystallinity of an interface of the gate insulating film and the microcrystalline semiconductor film. Then, the thin film transistor is formed by using the microcrystalline semiconductor film with improved crystallinity of the interface with the gate insulating film as a channel forming region. COPYRIGHT: (C)2009,JPO&INPIT
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