发明名称 |
FIELD EFFECT TRANSISTOR WITH ALTERNATING ELECTRICAL CONTACTS |
摘要 |
Field effect transistor (100) comprising: - a support layer (104), - a plurality of semiconductor based active zones (106), each active zone being intended to form a channel and disposed between two gates (112) situated one beside the other consecutively, the active zones and the gates being disposed on the support layer, each gate comprising a first face on the side of the support layer and a second face opposite the first face, - the second face of a first of the two gates being connected electrically to a first electrical contact (118, 122, 124) made on the second face of said first of the two gates, and the first face of a second of the two gates being connected electrically to a second electrical contact (118, 130, 132) passing through the support layer, the gates of the transistor not being electrically interconnected. |
申请公布号 |
WO2008155379(A3) |
申请公布日期 |
2009.04.09 |
申请号 |
WO2008EP57773 |
申请日期 |
2008.06.19 |
申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE;MAYER, FREDERIC;CLAVELIER, LAURENT;POIROUX, THIERRY;BILLIOT, GERARD |
发明人 |
MAYER, FREDERIC;CLAVELIER, LAURENT;POIROUX, THIERRY;BILLIOT, GERARD |
分类号 |
H01L29/786;H01L21/336 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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