| 摘要 |
<p>Provided are a film forming apparatus and a film forming method wherein film thickness uniformity is improved. A target (32) having a sputtering surface is mounted on turning mechanisms (24, 26, 27, 29, 31, MT) in a state inclined from the surface of a substrate (S). The turning mechanisms turnably support the target (32) with an axis along the normal line of the sputtering surface at the center. A thin film is formed on the surface of the substrate (S) by sputtering the target (32) supported by the turning mechanisms. When the thin film is formed, the turning mechanisms maintain the turning angle of the target (32).</p> |
| 申请人 |
ULVAC, INC.;IMAKITA, KENICHI;MORITA, TADASHI;YAMAMOTO, HIROKI;MORIMOTO, NAOKI;NABEYA, AYAO;NAKAMURA, SHINYA |
发明人 |
IMAKITA, KENICHI;MORITA, TADASHI;YAMAMOTO, HIROKI;MORIMOTO, NAOKI;NABEYA, AYAO;NAKAMURA, SHINYA |
