PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD

摘要

Provided is a plasma processing apparatus for plasma-processing a substrate to be processed. The plasma processing apparatus is provided with a metallic processing container (2) which forms a processing space (1) for performing plasma processing; a substrate placing table (3), which is arranged in the processing space (1) for placing a substrate (W) to be processed; a quartz member (4a), which shields a side wall of the metallic processing container (2) from the processing space (1), and has an lower end which extends downward from the substrate placing surface of the substrate placing table (3); an annular quartz member (6), which is arranged between the bottom surface of the quartz member (4a) and the bottom wall (2b) of the metallic processing container (2), and blocks the bottom wall (2b) of the metallic processing container (2) from the processing space (1); and a processing gas introducing section for introducing a processing gas into the processing space (1) from the vicinity of the outer circumference of the substrate placing table (3).