发明名称 RF SWITCH WITH HIGH ISOLATION PERFORMANCE
摘要 <p>Provided is a RF switch for switching a path of a RF signal using a semiconductor transistor such as a field effect transistor (FET). The RF switch includes a plurality of resonators connected to a RF transmission line, and at least one of switching elements connected in shunt or in series between the plural of resonators. The plurality of resonators resonate by interacting with the switching elements when the switching elements are shorted or open.</p>
申请公布号 WO2009044989(A1) 申请公布日期 2009.04.09
申请号 WO2008KR03703 申请日期 2008.06.26
申请人 ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE;CHANG, DONG-PIL;YOM, IN-BOK 发明人 CHANG, DONG-PIL;YOM, IN-BOK
分类号 H01H36/00 主分类号 H01H36/00
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