| 摘要 |
A semiconductor device having enhanced reliability which is obtained by cutting a wafer encapsulated by an encapsulating material layer in such a manner that each of end faces of bumps for an external terminal is exposed, and a method of isolating a metal in an encapsulating material to allow measuring. The semiconductor device comprises a semiconductor element, bumps formed on a surface thereof for external terminals, and an encapsulating material layer, the encapsulating material layer being formed of an encapsulating material containing greater than 70% by weight and not greater than 90% by weight of fused silica, based on the total weight of the encapsulating material. The metal in the encapsulating material comprising a resin component and a fumed silica filler is isolated for measuring by adding the encapsulating material to a solvent capable of dissolving the resin component, separating solvent-insolubles from the solution in which the resin component has been dissolved, introducing the insolubles into a liquid having a specific gravity of 2.5 to 5.5 to disperse the insolubles, and then recovering the precipitate. |
