FABRICATION METHOD OF CATALYST-LESS METAL NANO-RODS BY PLASMA-ENHANCED ATOMIC LAYER DEPOSITION AND A SEMICONDUCTOR ELEMENT

摘要

A fabrication method of a catalyst-less metal nano-rods by plasma-enhanced atomic layer deposition and a semiconductor element is provided to simplify a manufacturing process by growing a nano rod with a magnetic assembly. A silicon substrate without a natural oxide and a silicon substrate which is deposited with SiO2 of 100nm are heated at 300.C degrees. A redundancy precursor excluding a cobalt precursor is removed by spreading an argon purging gas for one second. NH3 200sccm and SiH 5cmm are reacted with a cobalt precursor absorbed on the silicon substrate. The redundancy reaction gas is removed by using the argon purging gas.