发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device equipped with an insulating film capable of suppressing the occurrence of failures such as the impairments of heat resistance and insulation and with metal wiring. SOLUTION: The manufacturing method includes: forming on a substrate, an insulating film 102 having hygroscopicity; forming dummy contact holes and contact holes in the insulating film; subjecting the substrate to a heating treatment to eliminate water content contained in the insulating film; and respectively forming contacts 103 and dummy contacts 110 constituted of a metal film. By the heating treatment, water content in the insulating film can be eliminated through the contact hole and the dummy contact hole. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009076615(A) 申请公布日期 2009.04.09
申请号 JP20070243326 申请日期 2007.09.20
申请人 PANASONIC CORP 发明人 ISONO SHUNSUKE
分类号 H01L21/768;H01L23/522 主分类号 H01L21/768
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