发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE |
摘要 |
A semiconductor device includes a substrate having a first area and a second area, a first active structure disposed in the first area, a second active structure disposed in the second area, a first transistor disposed in the first area and a second transistor disposed in the second area. The second active structure may have a height substantially the same as a height of the first active structure. The first transistor includes a first gate structure enclosing an upper portion of the first active structure, a first impurity region formed at a lower portion of the first active structure, and a second impurity region formed at the upper portion of the first active structure. The second transistor includes a second gate structure formed on the second active structure and third impurity regions formed at an upper portion of the second active structure.
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申请公布号 |
US2009090947(A1) |
申请公布日期 |
2009.04.09 |
申请号 |
US20080236154 |
申请日期 |
2008.09.23 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
YOON JAE-MAN;OH YONG-CHUL;KIM HUI-JUNG;CHUNG HYUN-WOO;KIM KANG-UK |
分类号 |
H01L29/78;H01L21/336;H01L27/06 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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