发明名称 |
DOPED NANOPARTICLE SEMICONDUCTOR CHARGE TRANSPORT LAYER |
摘要 |
<p>A method is disclosed for making a doped semiconductor transport layer for use in an electronic device comprising: growing in-situ doped semiconductor nanoparticles in a colloidal solution; depositing the in-situ doped semiconductor nanoparticles on a surface; and annealing the deposited in-situ doped semiconductor nanoparticles so that the organic ligands boil off the surface of the in-situ doped semiconductor nanoparticles.</p> |
申请公布号 |
WO2008130396(A3) |
申请公布日期 |
2009.04.09 |
申请号 |
WO2007US25518 |
申请日期 |
2007.12.13 |
申请人 |
EASTMAN KODAK COMPANY;KAHEN, KEITH BRIAN |
发明人 |
KAHEN, KEITH BRIAN |
分类号 |
H01L21/208;H01L21/368 |
主分类号 |
H01L21/208 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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