发明名称 DOPED NANOPARTICLE SEMICONDUCTOR CHARGE TRANSPORT LAYER
摘要 <p>A method is disclosed for making a doped semiconductor transport layer for use in an electronic device comprising: growing in-situ doped semiconductor nanoparticles in a colloidal solution; depositing the in-situ doped semiconductor nanoparticles on a surface; and annealing the deposited in-situ doped semiconductor nanoparticles so that the organic ligands boil off the surface of the in-situ doped semiconductor nanoparticles.</p>
申请公布号 WO2008130396(A3) 申请公布日期 2009.04.09
申请号 WO2007US25518 申请日期 2007.12.13
申请人 EASTMAN KODAK COMPANY;KAHEN, KEITH BRIAN 发明人 KAHEN, KEITH BRIAN
分类号 H01L21/208;H01L21/368 主分类号 H01L21/208
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