| 摘要 |
A method for forming a metal wiring of a semiconductor device is provided to minimize bridge generation between adjacent wires at a post process by suppressing generation of Al2Cu between an aluminum and a copper. An interlayer insulating film(102) is formed in upper part a semiconductor substrate(100). The photosensitive pattern is formed on the interlayer insulating film. The damascene pattern(D) is formed inside of the interlayer insulating film by etching the interlayer insulating film. The glue layer comprised of the material such as Ti film is the surface of the damascene pattern. A barrier film(106) is formed in the surface of the glue layer(104). A nucleation preventing film(107) is selectively formed at the upper part of the upper part of the side wall of the damascene pattern. The aluminum film(108) is evaporated within the damascene pattern, and the copper layer(110) is evaporated on the aluminum film. |
