| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor apparatus in which a surface electrode film of a semiconductor device can maintain an electrically and mechanically stable state even under a high temperature operating status. <P>SOLUTION: The semiconductor device 1 has electrodes 1a, 1b on its front and rear, respectively, and has a nickel film 3 coated on the aluminum electrode film as a metal protection film to prevent an increase in electric resistance due to deterioration of an aluminum electrode film formed as the surface electrode 1a or to prevent a debonding of an aluminum wire 2. Further, the rear electrode 1b is solder-jointed to a conductive layer constituting an electric circuit pattern of a DBC substrate. Herein, the surface electrode 1a is an emitter electrode of an IGBT module, and a wiring structure in which an aluminum wire 2 is bonded onto the nickel film 3 by thermocompression bonding or ultrasonic vibration is employed therein. <P>COPYRIGHT: (C)2009,JPO&INPIT |
