发明名称 SEMICONDUCTOR MEMORY AND MANUFACTURING METHOD THEREFOR
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device having a capacitor which is superior in mechanical strength, even if an element is microfabricated, and for which microfabrication work is facilitated and full storage capacity is secured. SOLUTION: The plurality of capacitors having columnar lower electrodes (101, 201, 301), capacitance insulating films (102, 202, 302) and upper electrodes (103, 203, 303) are laminated via an inter-layer film, and the semiconductor memory is provided with a contact plug (104) for connecting the lower end of the lower electrode (201) of the upper-layer capacitor from the upper end of the lower electrode (101) of the lower-layer capacitor and a contact plug (22) for connecting the upper electrodes of the respective layer capacitors. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009076639(A) 申请公布日期 2009.04.09
申请号 JP20070243747 申请日期 2007.09.20
申请人 ELPIDA MEMORY INC 发明人 YOKOI NAOKI
分类号 H01L21/8242;H01L27/10;H01L27/108 主分类号 H01L21/8242
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