发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a method for forming an amorphous-carbon hard mask generating no bowing and thinning of a pattern when an amorphous-carbon film is worked in a hard mask shape. SOLUTION: When the amorphous-carbon film 13 is worked, the amorphous-carbon film 13 is worked on its midway of a working (16), and a protective film 12b consisting of an oxide film is formed on the side wall of the exposed amorphous-carbon film. The protective film is formed particularly by sputtering an intermediate mask layer 12a when the amorphous-carbon film is worked. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009076661(A) 申请公布日期 2009.04.09
申请号 JP20070243987 申请日期 2007.09.20
申请人 ELPIDA MEMORY INC 发明人 SUKEGAWA MITSUNARI
分类号 H01L21/3065;H01L21/768;H01L23/522 主分类号 H01L21/3065
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