| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that can reduce light induced from a lateral direction and from an obliquely-upward direction while a variation of a property of the device is regulated. SOLUTION: The semiconductor device includes: a first semiconductor element 120; a first shielded region 10A defined by a first light shield wall 50 formed around the first semiconductor element 120; a second semiconductor element 120'; (d) a second shielded region 10A' defined by a second light shield wall 50' formed around the second semiconductor element 120', and formed adjoining the first shielded region 10A; a first opening 52 formed at the first light shield wall 50; a second opening 52' formed at the second light shield wall 50' positioned facing the first opening 52, a first wiring layer 24 connected to the first semiconductor element 120 and led out through the first opening 52 to the outside of the first shielded region 10A, a second wiring layer 24' connected to the second semiconductor element 120' and led out through the second opening 52' to the out side of the second shielded region 10A', and at least a light shielding film 60 formed above a region held between the first shielded region 10A and the second shielded region 10A'. COPYRIGHT: (C)2009,JPO&INPIT
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