| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of balancing improvement of breakdown strength with suppression of drop of a threshold voltage Vt by stabilizing well potential even when miniaturized, and having a trench gate; and its manufacturing method. SOLUTION: This semiconductor device includes: an N-type drain region 2a; low-concentration P-type body regions 3 formed on the N-type drain region 2a; N-type source regions 4 formed on the low-concentration P-type body regions 3; high-concentration P-type body regions 5 formed on the low-concentration P-type body regions 3; gate insulation films 6; and gate electrodes 7. A plurality of trenches T reaching the N-type drain region 2a through the low-concentration P-type body regions 3 from the upper surfaces of the N-type source regions 4 and the high-concentration P-type body regions 5, and extending in the same direction while repeating recesses and projections in top view are formed, and the gate electrodes 7 are embedded in the trenches T. The maximum distance between the trenches T in the N-type source region 4 is larger than the maximum distance between the trenches T in the high-concentration P-type body region 5. COPYRIGHT: (C)2009,JPO&INPIT
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