| 摘要 |
PROBLEM TO BE SOLVED: To reduce variation in channel length of an SiC MOSFET. SOLUTION: A semiconductor device includes: a first silicon carbide layer (2) of a first conductivity type provided on a silicon carbide substrate; a second silicon carbide layer (3) of a second conductivity type formed on the first silicon carbide layer (2); first and second silicon carbide regions (4, 5) of a first conductivity type provided on a surface of the second silicon carbide layer (3), facing each other at a predetermined interval and having the same concentration and same depth; a third SiC region (9) extending through the first silicon carbide region (1) and second silicon carbide layer (3) and reaching the first silicon carbide layer; a gate insulator film (10<SB>1</SB>) formed continuously on the first and second silicon carbide regions (4, 5) and the second silicon carbide layer (3) interposed therebetween; and a gate electrode (11) formed on the gate insulator film (10<SB>1</SB>). COPYRIGHT: (C)2009,JPO&INPIT
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