| 摘要 |
PROBLEM TO BE SOLVED: To provide a ferroelectric capacitor capable of preventing an increase in leak current caused by the growth of protruding crystals in a PZT film by MOCVD method, and to provide a manufacturing method therefor and a ferroelectric memory device. SOLUTION: The ferroelectric capacitor has a lower electrode 12, a ferroelectric film 13 and an upper electrode 14. The ferroelectric film 13 includes a first ferroelectric layer 13a which is formed on the lower electrode 12 by a metal-organic chemical vapor deposition and made of a composition, having a perovskite crystal structure represented by Pb(Zr, Ti)O<SB>3</SB>; and a second ferroelectric layer 13b which is formed on the first ferroelectric layer 13a by a chemical solution deposition and made of a composition, having a perovskite crystal structure represented by Pb(Zr, Ti, MB)O<SB>3</SB>(where MB is a metal element other than Zr, Ti and can enter a B site) and in which the ratio of the number of atoms of MB in the B site [äMB/(Zr+Ti+MB)}×100] is≥0% to≤5%. COPYRIGHT: (C)2009,JPO&INPIT
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