Semiconductor device and method of producing the same

摘要

A semiconductor device includes a silicon carbide substrate having a channel region formed on a surface thereof; a silicon layer formed on the channel region; a gate insulation film formed on the silicon layer; and a gate electrode formed on the gate insulation film. A method of producing a semiconductor device includes the steps of: forming a silicon layer on a surface of a silicon carbide substrate; forming a gate insulation film on the silicon layer to form a laminated structure of the silicon layer and the gate insulation film; and forming a gate electrode on the gate insulation film.