| 发明名称 |
PROCESS FOR INTEGRATING PLANAR AND NON-PLANAR CMOS TRANSISTORS ON A BULK SUBSTRATE AND ARTICLE MADE THEREBY |
| 摘要 |
A process capable of integrating both planar and non-planar transistors onto a bulk semiconductor substrate, wherein the channel of all transistors is definable over a continuous range of widths.
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| 申请公布号 |
US2009090976(A1) |
申请公布日期 |
2009.04.09 |
| 申请号 |
US20080333248 |
申请日期 |
2008.12.11 |
| 申请人 |
INTEL CORPORATION |
发明人 |
KAVALIEROS JACK T.;BRASK JUSTIN K.;DOYLE BRIAN S.;SHAH UDAY;DATTA SUMAN;DOCZY MARK L.;METZ MATTHEW V.;CHAU ROBERT S. |
| 分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
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