发明名称 |
Organic semiconductor device |
摘要 |
Provided is an organic tunneling p-n junction diode. The organic tunneling p-n junction diode includes an n-doped organic semiconductor layer and a p-doped organic semiconductor layer which are doped with extrinsic impurities. When either a reverse-bias voltage or a forward-bias voltage is applied, the organic tunneling p-n junction diode is turned off within a predetermined voltage range and has exponential voltage-current characteristics outside the predetermined voltage range.
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申请公布号 |
US2009090904(A1) |
申请公布日期 |
2009.04.09 |
申请号 |
US20080078647 |
申请日期 |
2008.04.02 |
申请人 |
LEE SUNG-HUN;KIM SANG-YEOL;KIM MU-GYEOM;SONG JUNG-BAE |
发明人 |
LEE SUNG-HUN;KIM SANG-YEOL;KIM MU-GYEOM;SONG JUNG-BAE |
分类号 |
H01L29/808 |
主分类号 |
H01L29/808 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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