发明名称 Organic semiconductor device
摘要 Provided is an organic tunneling p-n junction diode. The organic tunneling p-n junction diode includes an n-doped organic semiconductor layer and a p-doped organic semiconductor layer which are doped with extrinsic impurities. When either a reverse-bias voltage or a forward-bias voltage is applied, the organic tunneling p-n junction diode is turned off within a predetermined voltage range and has exponential voltage-current characteristics outside the predetermined voltage range.
申请公布号 US2009090904(A1) 申请公布日期 2009.04.09
申请号 US20080078647 申请日期 2008.04.02
申请人 LEE SUNG-HUN;KIM SANG-YEOL;KIM MU-GYEOM;SONG JUNG-BAE 发明人 LEE SUNG-HUN;KIM SANG-YEOL;KIM MU-GYEOM;SONG JUNG-BAE
分类号 H01L29/808 主分类号 H01L29/808
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