| 摘要 |
A metal line is formed to realize an improved electrical conductivity over the conventional aluminum metal lines. The metal line of a semiconductor device is made by forming an interlayer dielectric having a metal line forming region on a semiconductor substrate. A diffusion barrier on the interlayer dielectric is formed which includes a surface of the metal line forming region. A nucleus formation prevention layer is formed on upper ends of sidewalls of the metal line forming region and on a portion of the diffusion barrier which is placed on an upper surface of the interlayer dielectric. A laminated metal layer made of an aluminum layer and a copper layer is formed to fill the metal line forming region. A portion of the laminated metal layer, the nucleus formation prevention layer and the diffusion barrier is removed to expose the interlayer dielectric. The laminated metal layer is annealed into an annealed metal layer.
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