发明名称 |
INDIUM OXIDE-BASED TRANSPARENT ELECTROCONDUCTIVE FILM AND PROCESS FOR PRODUCING THE INDIUM OXIDE-BASED TRANSPARENT ELECTROCONDUCTIVE FILM |
摘要 |
<p>This invention provides an indium oxide-based transparent electroconductive film and a process for producing the indium oxide-based transparent electroconductive film. The indium oxide-tin oxide film is used as a transparent electroconductive film, for example, in liquid crystal display devices. However, an amorphous film cannot be formed from the indium oxide-tin oxide film without difficulties. Further, a transparent electroconductive film formed of indium oxide-zinc oxide is known as an amorphous film. This film, however, suffers from problems such as poor transparency. The above problems could have been solved by a transparent electroconductive film containing indium oxide and tin and further containing magnesium, wherein the proportion of the molar ratio of tin to one mole of indium to the molar ratio X of magnesium to one mole of indium is not less than (-4.1 x 10-2Ln(X) - 9.3 x 10-2) and not more than (-2.5 x 10-1Ln(X) - 5.7 x 10-1).</p> |
申请公布号 |
WO2009044891(A1) |
申请公布日期 |
2009.04.09 |
申请号 |
WO2008JP68100 |
申请日期 |
2008.10.03 |
申请人 |
MITSUI MINING & SMELTING CO., LTD.;TAKAHASHI, SEIICHIRO;MIYASHITA, NORIHIKO |
发明人 |
TAKAHASHI, SEIICHIRO;MIYASHITA, NORIHIKO |
分类号 |
H01B5/14;C23C14/08;C23C14/34;H01B13/00 |
主分类号 |
H01B5/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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