发明名称 INDIUM OXIDE-BASED TRANSPARENT ELECTROCONDUCTIVE FILM AND PROCESS FOR PRODUCING THE INDIUM OXIDE-BASED TRANSPARENT ELECTROCONDUCTIVE FILM
摘要 <p>This invention provides an indium oxide-based transparent electroconductive film and a process for producing the indium oxide-based transparent electroconductive film. The indium oxide-tin oxide film is used as a transparent electroconductive film, for example, in liquid crystal display devices. However, an amorphous film cannot be formed from the indium oxide-tin oxide film without difficulties. Further, a transparent electroconductive film formed of indium oxide-zinc oxide is known as an amorphous film. This film, however, suffers from problems such as poor transparency. The above problems could have been solved by a transparent electroconductive film containing indium oxide and tin and further containing magnesium, wherein the proportion of the molar ratio of tin to one mole of indium to the molar ratio X of magnesium to one mole of indium is not less than (-4.1 x 10-2Ln(X) - 9.3 x 10-2) and not more than (-2.5 x 10-1Ln(X) - 5.7 x 10-1).</p>
申请公布号 WO2009044891(A1) 申请公布日期 2009.04.09
申请号 WO2008JP68100 申请日期 2008.10.03
申请人 MITSUI MINING & SMELTING CO., LTD.;TAKAHASHI, SEIICHIRO;MIYASHITA, NORIHIKO 发明人 TAKAHASHI, SEIICHIRO;MIYASHITA, NORIHIKO
分类号 H01B5/14;C23C14/08;C23C14/34;H01B13/00 主分类号 H01B5/14
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