METHOD TO IMPROVE A COPPER/DIELECTRIC INTERFACE IN SEMICONDUCTOR DEVICES,申请号WO2008US76621-传众专利搜索

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发明名称	METHOD TO IMPROVE A COPPER/DIELECTRIC INTERFACE IN SEMICONDUCTOR DEVICES
摘要	<p>Embodiments of methods for improving a copper/dielectric interface (260) in semiconductor devices are generally described herein.</p>
申请公布号	WO2009045718(A1)	申请公布日期	2009.04.09
申请号	WO2008US76621	申请日期	2008.09.17
申请人	TEL EPION INC.;RUSSELL, NOEL;SHERMAN, STEVEN;HAUTALA, JOHN, J.	发明人	RUSSELL, NOEL;SHERMAN, STEVEN;HAUTALA, JOHN, J.
分类号	H01L21/768	主分类号	H01L21/768
代理机构		代理人
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