发明名称 |
PHOTOMASK AND PATTERN FORMATION METHOD USING THE SAME |
摘要 |
<P>PROBLEM TO BE SOLVED: To simultaneously form a fine line pattern and a thick line pattern using an enhancer mask capable of performing simultaneous formation of a fine isolated line pattern and a dense line pattern. <P>SOLUTION: The photomask includes a first light-shielding pattern 6 having a first dimension S1 and a second light-shielding pattern 7 having a second dimension S2 larger than the first dimension S1, which are formed on a transparent substrate 1. The first light-shielding pattern 6 includes a first semi-light-shielding portion 2A and an auxiliary pattern 3 which is arranged within the first semi-light-shielding portion 2A and allows the exposing light to pass through in an opposite phase. The second light-shielding pattern 7 includes a second semi-light-shielding portion 2B and a light-shielding portion 5. <P>COPYRIGHT: (C)2009,JPO&INPIT |
申请公布号 |
JP2009075207(A) |
申请公布日期 |
2009.04.09 |
申请号 |
JP20070242195 |
申请日期 |
2007.09.19 |
申请人 |
PANASONIC CORP |
发明人 |
SHIMIZU TADAYOSHI;MITSUSAKA AKIO;SASAKO MASARU |
分类号 |
G03F1/32;G03F1/36;G03F1/68 |
主分类号 |
G03F1/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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