发明名称 PHOTOMASK AND PATTERN FORMATION METHOD USING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To simultaneously form a fine line pattern and a thick line pattern using an enhancer mask capable of performing simultaneous formation of a fine isolated line pattern and a dense line pattern. <P>SOLUTION: The photomask includes a first light-shielding pattern 6 having a first dimension S1 and a second light-shielding pattern 7 having a second dimension S2 larger than the first dimension S1, which are formed on a transparent substrate 1. The first light-shielding pattern 6 includes a first semi-light-shielding portion 2A and an auxiliary pattern 3 which is arranged within the first semi-light-shielding portion 2A and allows the exposing light to pass through in an opposite phase. The second light-shielding pattern 7 includes a second semi-light-shielding portion 2B and a light-shielding portion 5. <P>COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009075207(A) 申请公布日期 2009.04.09
申请号 JP20070242195 申请日期 2007.09.19
申请人 PANASONIC CORP 发明人 SHIMIZU TADAYOSHI;MITSUSAKA AKIO;SASAKO MASARU
分类号 G03F1/32;G03F1/36;G03F1/68 主分类号 G03F1/32
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