| 摘要 |
PROBLEM TO BE SOLVED: To form a uniform coating film on a substrate by oxidizing the coating film on the substrate to the inside thereof. SOLUTION: A coating solution containing polysilazane is applied to a wafer to form a coating film (step S1), and thereafter the wafer is heated to evaporate a part of a solvent in the coating film (step S2). Thereafter, the wafer is irradiated with an ultraviolet ray to cut molecular bonds of Si-N and molecular bonds of Si-H in the coating film (step S3). Thereafter, the coating film is oxidized in steam while heating the wafer (step S4). Thereafter, a desired coating film is formed on the wafer by baking the wafer and dehydrating and condensing the coating film (step S5). COPYRIGHT: (C)2009,JPO&INPIT
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