| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a display unit reduced in the number of manufacturing steps, and suppressed degradation in characteristics of a film transistor. SOLUTION: A display unit manufactured by this method is provided with a first thin film transistor formed by sequentially forming a gate electrode, a gate insulating layer, a semiconductor layer of a crystal layer and an amorphous layer, a source electrode, and a drain electrode on the same substrate and a second thin film transistor formed by sequentially forming a gate electrode, a gate insulating film, an amorphous semiconductor layer, a source electrode, and a drain electrode. This manufacturing method includes steps of forming, after the formation of the gate insulating film, an amorphous semiconductor layer on the substrate and also selectively forming a crystalline semiconductor layer to the amorphous semiconductor layer and etching the amorphous semiconductor layer by making the crystalline semiconductor layer remain using an alkali etching solution (etchant) of the amine system. COPYRIGHT: (C)2009,JPO&INPIT
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