发明名称 |
DUAL WORK FUNCTION HIGH VOLTAGE DEVICES |
摘要 |
A transistor has a substrate having a channel region and source and drain regions within the substrate on opposite sides of the channel region. The structure includes a gate oxide above the channel region of the substrate and a gate conductor above the gate oxide. The polysilicon gate conductor comprises a source side positioned toward the source and a drain side positioned toward the drain. The source side comprises a first concentration of conductive doping and the drain side comprises a second concentration of the conductive doping that is less than the first concentration.
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申请公布号 |
US2009090983(A1) |
申请公布日期 |
2009.04.09 |
申请号 |
US20070866594 |
申请日期 |
2007.10.03 |
申请人 |
ADKISSON JAMES W;GAMBINO JEFFREY P;NOWAK EDWARD J;VOLDMAN STEVEN H;ZIERAK MICHAEL J |
发明人 |
ADKISSON JAMES W.;GAMBINO JEFFREY P.;NOWAK EDWARD J.;VOLDMAN STEVEN H.;ZIERAK MICHAEL J. |
分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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