发明名称 |
FLASH MEMORY DEVICE WITH STRAIGHT WORD LINES |
摘要 |
Embodiments of the present invention disclose a memory device having an array of flash memory cells with source contacts that facilitate straight word lines, and a method for producing the same. The array is comprised of a plurality of non-intersecting shallow trench isolation (STI) regions that isolate a plurality of memory cell columns. A source column is implanted with n-type dopants after the formation of a tunnel oxide layer and a first polysilicon layer. The implanted source column is coupled to a plurality of common source lines that are coupled to a plurality of source regions associated with memory cells in the array. A source contact is coupled to the implanted source column for providing electrical coupling with the plurality of source regions. The source contact is collinear with a row of drain contacts that are coupled to drain regions associated with a row of memory cells. The arrangement of source contacts collinear with the row of drain contacts allows for straight word line formation.
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申请公布号 |
US2009090953(A1) |
申请公布日期 |
2009.04.09 |
申请号 |
US20080327641 |
申请日期 |
2008.12.03 |
申请人 |
FANG SHENQING;OGAWA HIROYUKI;CHANG KUO-TUNG;FASTENKO PAVEL;MIZUTANI KAZUHIRO;WANG ZHIGANG |
发明人 |
FANG SHENQING;OGAWA HIROYUKI;CHANG KUO-TUNG;FASTENKO PAVEL;MIZUTANI KAZUHIRO;WANG ZHIGANG |
分类号 |
H01L29/788 |
主分类号 |
H01L29/788 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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