CAPACITANCE ELEMENT AND SEMICONDUCTOR DEVICE

摘要

A capacitance element has a first comb-shaped wiring (14a) formed on a substrate (10) and having a first comb tooth, a second comb-shaped wiring (14b) formed on the substrate and having a second comb tooth arranged to oppose to the first comb tooth, a first electrode and a second electrode which are the first electrode (16a) and the second electrode (16b) opposed to each other with the direction of the opposing surfaces crossing the lengthwise directions of the first comb tooth and second comb tooth, and a first dielectric layer formed between the first electrode and second electrode. The first electrode is connected to the first comb tooth, and the second electrode is connected to the second comb tooth.