发明名称 THIN FILM TRANSISTOR, DISPLAY DEVICE HAVING THIN FILM TRANSISTOR, AND METHOD FOR MANUFACTURING THE SAME
摘要 <p>A thin film transistor, a display device having a thin film transistor is provided to manufacture a thin film transistor having a high electrical property by using non-crystalline thin film as a channel. A buffer layer(73) is formed on a non crystalline, and a pair of semiconductor films(72) having impurity element is formed on the buffer. Wirings(71a~71c) are formed on the pair of the semiconductor film, and the thickness of the non-crystalline having a donor is between 1nm and 50nm. non-crystalline semiconductor film is non-crystalline containing a silicon film or germanium. The donor is made of phosphorus, arsenic, antimony.</p>
申请公布号 KR20090035426(A) 申请公布日期 2009.04.09
申请号 KR20080095347 申请日期 2008.09.29
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 YAMAZAKI SHUNPEI;KUROKAWA YOSHIYUKI;JINBO YASUHIRO;KOBAYASHI SATOSHI;KAWAE DAISUKE
分类号 H01L29/786;G02F1/136 主分类号 H01L29/786
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