发明名称 |
THIN FILM TRANSISTOR, DISPLAY DEVICE HAVING THIN FILM TRANSISTOR, AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
<p>A thin film transistor, a display device having a thin film transistor is provided to manufacture a thin film transistor having a high electrical property by using non-crystalline thin film as a channel. A buffer layer(73) is formed on a non crystalline, and a pair of semiconductor films(72) having impurity element is formed on the buffer. Wirings(71a~71c) are formed on the pair of the semiconductor film, and the thickness of the non-crystalline having a donor is between 1nm and 50nm. non-crystalline semiconductor film is non-crystalline containing a silicon film or germanium. The donor is made of phosphorus, arsenic, antimony.</p> |
申请公布号 |
KR20090035426(A) |
申请公布日期 |
2009.04.09 |
申请号 |
KR20080095347 |
申请日期 |
2008.09.29 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;KUROKAWA YOSHIYUKI;JINBO YASUHIRO;KOBAYASHI SATOSHI;KAWAE DAISUKE |
分类号 |
H01L29/786;G02F1/136 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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