| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor material in which the electron density of the obtained semiconductor material can be easily controlled to a desired value within a wide electron density range, and a solar cell using the thus manufactured semiconductor material. <P>SOLUTION: Provided is a semiconductor material manufacturing method wherein at least one kind of impurity atom selected from among a group of As atom, Sb atom, Bi atom and N atom is reacted with a Ba atom and a Si atom. A solar cell provided with such semiconductor material is also provided. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
