| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a photoelectric conversion device having improved photoelectric conversion efficiency by increasing open circuit voltage and a short-circuit current without the need for a semiconductor layer as a window layer on a light incident side to contain a high-concentration impurity element, while suppressing the exhaust amount of carbon dioxide, when manufactured. <P>SOLUTION: The photoelectric conversion device comprises at least one p-type semiconductor layer containing silicon atoms, and at least one pin-type photoelectric conversion layer formed by laminating the p-type semiconductor layer, an i-type semiconductor layer and a n-type semiconductor layer, at least one layer of the p-type semiconductor layer containing nitrogen atoms, the p-type semiconductor layer consisting of a first p-type semiconductor layer containing nitrogen atoms at a concentration of 0.5-10 atom%, and a second p-type semiconductor layer having a crystal silicon phase. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
