发明名称 Carrier Structure for stacked-type semiconductor device, method of producing the same, and method of fabricating stacked-type semiconductor device
摘要 A carrier structure for fabricating a stacked-type semiconductor device includes: a lower carrier that has laminated thin plates and has first openings for mounting first semiconductor packages thereon; and an upper carrier having second openings for mounting second semiconductor packages on the first semiconductor packages. The lower carrier composed of the laminated thin plates realizes an even plate thickness and reduces warps because stress is distributed to the thin plates. This results in an improved production yield. A pattern of the openings in the thin plates of the lower carrier may be formed by etching or electric discharging. The openings thus formed have reduced warps and burrs.
申请公布号 US2009093085(A1) 申请公布日期 2009.04.09
申请号 US20080315417 申请日期 2008.12.03
申请人 发明人 ONODERA MASANORI;MEGURO KOUICHI;KASAI JUNICHI;SHINMA YASUHIRO;TAYA KOJI;TANAKA JUNJI
分类号 H01L21/71;H01L23/48 主分类号 H01L21/71
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