发明名称 FLASH MEMORY APPARATUS AND PROGRAMMING METHOD THEREOF
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a flash memory apparatus and a programming method thereof. <P>SOLUTION: The flash memory apparatus includes a memory cell array having a plurality of memory blocks, a row decoder for providing a program voltage to a selected word line, a block selection circuit that is connected between the memory cell array and the row decoder and that selects one or more memory blocks from the plurality of memory blocks, and a high voltage generating circuit that provides a high voltage to the block selection circuit and provides the program voltage to the row decoder. The high voltage generating circuit includes a charge pump, a high voltage control circuit that controls the charge pump to provide the high voltage, and a program voltage control circuit that provides the program voltage using the high voltage, and the high voltage control circuit and the program voltage control circuit operate according to the same code signal. <P>COPYRIGHT: (C)2009,JPO&INPIT</p>
申请公布号 JP2009076193(A) 申请公布日期 2009.04.09
申请号 JP20080235102 申请日期 2008.09.12
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 LEE YOU-SANG;CHOI YOON-HEE
分类号 G11C16/06 主分类号 G11C16/06
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