发明名称 |
ION SOURCE, ION IMPLANTING DEVICE, AND ION IMPLANTATION METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide an ion source achieving improvement in uniformity of a beam current density distribution in a Y-direction of ribbon-like ion beams and a given uneven distribution, by making partially controllable a plasma density in the Y-direction inside a plasma generating vessel. SOLUTION: The ion source 10b generates ribbon-like ion beams with a dimension in a Y-direction larger than that in an X-direction. The ion source 10b is provided with a plasma generating vessel 12 with an ion extracting port 14 extended in a Y-direction, a plurality of cathodes 20 arranged in a plurality of steps along a Y-direction at one side in an X-direction inside the plasma generating vessel 12, a reflecting electrode 32 set in opposition to the cathodes 20 at the other side in an X-direction inside the plasma generating vessel 12, and electromagnets 40 for generating magnetic fields 50 along the X-direction in a region including the plurality of cathodes 20 inside the plasma generating vessel 12. COPYRIGHT: (C)2009,JPO&INPIT
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申请公布号 |
JP2009076287(A) |
申请公布日期 |
2009.04.09 |
申请号 |
JP20070243308 |
申请日期 |
2007.09.20 |
申请人 |
NISSIN ION EQUIPMENT CO LTD |
发明人 |
YAMASHITA TAKATOSHI;IKEJIRI TADASHI;HISAZAWA KEIKO;FUJIWARA HIDEYUKI |
分类号 |
H01J27/02;H01J27/08;H01J37/08;H01J37/317 |
主分类号 |
H01J27/02 |
代理机构 |
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