| 摘要 |
PROBLEM TO BE SOLVED: To provide a gas supply device for semiconductor manufacturing facilities by an MOCVD method, which prevents deterioration in quality of a semiconductor. SOLUTION: The gas supply device for semiconductor manufacturing facilities is equipped with a main gas supply line L<SB>1</SB>for supplying material gas to a reactor PC and a vent gas supply line L<SB>2</SB>for discharging the material gas, and a pressure type flow rate controller FCS-N is provided on an entrance side of the main gas supply line so that while the pressure type flow rate controller performs flow rate control, predetermined amounts of carrier gases C<SB>1</SB>to C<SB>5</SB>are supplied to the main gas supply line. A pressure controller FCS-RV is provided on an entrance side of the vent gas supply line and while the pressure controller adjusts pressure, a carrier gas of predetermined pressure is supplied to the vent gas supply line, wherein the pressure P<SB>10</SB>of the main gas pressure line detected downstream of an orifice OL of the pressure type flow rate controller is compared with the pressure P<SB>2</SB>of the vent gas supply line, and the gas pressure P<SB>2</SB>of the vent gas supply line is adjusted so that the difference between the both becomes zero. COPYRIGHT: (C)2009,JPO&INPIT |
