Halbleiterbauelement mit einer Metallisierung mit mehreren durch zumindest eine Barriereschicht getrennten Metallisierungsschichten sowie Verfahren zu dessen Herstellung

摘要

Semiconductor component comprises a semiconductor substrate (1) having a metallization (40) with a barrier layer (21, 22) arranged between metallization layers (11, 12, 13). At least one of the metallization layers is made from aluminum or aluminum alloy and the barrier layer is made from titanium, titanium nitride or nickel. The side of the metallization facing the substrate is formed as a metallization layer. An independent claim is also included for a process for producing a metallization on a semiconductor substrate.