| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a positive-type resist composition which is usable for forming patterns by using a high-energy ray having a wave length of 300 nm or shorter or an electron beam and can solve a problem of the occurrence of pattern exfoliation or pattern falling-down due to the penetration of a developing solution into an interface between the resist film and a substrate. <P>SOLUTION: The positive-type resist composition comprises at least (A) a fluorine-containing polymer compound containing a following first repeating unit (a-1) and a second repeating unit (a-2) having an acid-labile protecting group, in which the fluorine-containing polymer compound has a weight-average molecular weight of 1,000-1,000,000, (B) an acid generator for generating an acid by the exposure to light and (C) a solvent. <P>COPYRIGHT: (C)2009,JPO&INPIT |
