| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a memory element having a large memory window and a high reliability at low cost by performing high speed write and erase operations at a relatively low voltage and suppressing rewriting degradation. <P>SOLUTION: The memory element includes a semiconductor layer arranged on an insulating substrate, a first diffusion layer region and a second diffusion layer region having a conductivity type of P-type, a charge storage film for covering a channel region between the first diffusion layer region and the second diffusion layer region and being injected with charges from the channel region, and a gate electrode positioned on a side opposite to the channel region with the charge storage film in between. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
