| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor apparatus wherein the thermal conductivity of second layers 3a, 3b is improved. <P>SOLUTION: In this semiconductor apparatus wherein an insulating first layer 2 whose base material is a resin is arranged on the whole top face of a heat sink 1, second layers 3a and 3b whose base materials are a resin are arranged on the first layer 2, metal spreaders 4a and 4b are arranged on the second layers 3a and 3b, a semiconductor device 5 is arranged on the metal spreader 4a, external terminals 6a and 6b are electrically connected to the metal spreaders 4a and 4b, a semiconductor device 5 is sealed with a sealing resin 8 so that the underside of the heat sink 1 and parts of the external terminals 6a and 6b are exposed, the second layers 3a and 3b are formed to be electrically conductive by making the base material of the resin contain an electrically conductive filler so that the relationship between voltages applied to the second layers 3a and 3b and currents flowing through the second layers 3a and 3b are brought into a nearly proportional relationship, the second layers 3a and 3b are arranged only in a portion on the first layer 2, and contact with the metal spreaders 4a and 4b, and the second layers 3a and 3b are not arranged in a portion on the first layer 2 which is not in contact with the metal spreaders 4a and 4b. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
