| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate machining method for efficiently washing or etching the upper and lower faces of a substrate. SOLUTION: In the substrate machining method, the substrate is supported and the supported substrate is rotated. At least one of chemical, washing liquid and gas is selectively injected to the lower face of the rotated substrate. At least one of chemical, washing liquid and gas being the same as the chemical, the washing liquid and the gas injected to the lower face of the substrate is selectively injected to the upper face of the rotated substrate. With the chemical, the washing liquid or the gas injected to the lower part of the substrate for washing or etching the lower face of the substrate, processes for the upper face and the lower face of the substrate can be carried out at the same time. COPYRIGHT: (C)2009,JPO&INPIT |
