| 摘要 |
PROBLEM TO BE SOLVED: To provide an information memory element which is less in power consumption, is longer in information holding time, and has high matching with a semiconductor process. SOLUTION: The information memory element includes a lower electrode 12 which is formed on a semiconductor substrate 10 with an insulator layer 11 interposed, a solid electrolytic layer 13 which is formed on the lower electrode 12, a variable resistance layer 14 which is formed on the solid electrolytic layer 13 in a way that its resistance is reduced by taking in at least one kind of ion by applying a voltage and its resistance is increased by discharge the ion, and a first upper electrode 15 and a second upper electrode 16 which are formed at intervals on the variable resistance layer 14, respectively. Whereby, the information memory element, which has high matching with a semiconductor process, can be microfabricated, is less in a power consumption, and is longer in information holding time, can be attained. COPYRIGHT: (C)2009,JPO&INPIT |
