| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of effectively cleaning a semiconductor wafer in a short cycle time without increasing roughness of a surface to such an extent that it can not be allowed. SOLUTION: The method for cleaning the semiconductor wafer comprises: the formation of a first liquid film on a surface to be cleaned of the semiconductor wafer, the first liquid film containing hydrogen fluoride and ozone; replacement of the first liquid film with a second aqueous liquid film which contains hydrogen fluoride and ozone; and removal of the second liquid film, wherein the concentration of hydrogen fluoride in the second liquid film is lower than in the first liquid film. COPYRIGHT: (C)2009,JPO&INPIT
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