| 摘要 |
PROBLEM TO BE SOLVED: To provide an organic semiconductor element of high productivity, including an organic semiconductor transistor of high transistor performance by having a gate insulating layer with constant thickness and smooth surface. SOLUTION: The organic semiconductor element includes a substrate, a source electrode and drain electrode formed on the substrate, an insulating barrier wall which is made of an insulating material and is formed on the source electrode and drain electrode, with the above part of a channel region consisting of the source electrode and the drain electrode being opened, an organic semiconductor layer of organic semiconductor material which is present in the opening of the insulating barrier wall, is formed on the source electrode and the drain electrode, a gate insulating layer of insulating resin material which is formed on the organic semiconductor layer, and a gate electrode formed on the gate insulating layer. The gate insulating layer is so formed as to be integral with an inter-layer insulating layer. COPYRIGHT: (C)2009,JPO&INPIT
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