发明名称 HEAT TREATMENT APPARATUS AND HEAT TREATMENT METHOD
摘要 PROBLEM TO BE SOLVED: To provide a heat treatment apparatus and a heat treatment method, which uniformly heat-treat a semiconductor layer including impurity, and to provide a method of manufacturing a semiconductor apparatus, which uses heat treatment equipment. SOLUTION: The heat treatment apparatus and method include a molten metal, a means irradiating the molten metal with light and a means holding a workpiece so that at least a part of the workpiece is brought into contact with the molten metal. The molten metal is heated by irradiating the molten metal with light by the means irradiating light. Then, the workpiece is heat-treated with the heated molten metal as a heating medium. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009076678(A) 申请公布日期 2009.04.09
申请号 JP20070244299 申请日期 2007.09.20
申请人 ADVANCED LCD TECHNOLOGIES DEVELOPMENT CENTER CO LTD 发明人 SASAKI ATSUSHI
分类号 H01L21/265;H01L21/20;H01L21/336;H01L29/786 主分类号 H01L21/265
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