| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of an SOI substrate capable of increasing an area and improving productivity. SOLUTION: After a plurality of single crystal semiconductor substrates are arrayed, one base substrate and a plurality of single crystal semiconductor substrates are adhered by overlapping the one base substrate on the plurality of single crystal semiconductor substrates in an arrayed state. Then, the plurality of respective single crystal semiconductor substrates are divided to form a plurality of single crystal semiconductor layers on the base substrate. In this situation, a container (a tray) for temporarily housing the plurality of arrayed single crystal semiconductor substrates is prepared, and the above adhesion is conducted with the plurality of single crystal semiconductor substrates arrayed in the tray. Then, a laser beam is irradiated on the plurality of single crystal semiconductor layers to reduce crystal defects existing in the plurality of single crystal semiconductor layers. At that time, before or after the irradiation of the laser beam, the plurality of single crystal semiconductor layers are etched to be formed into thin films by etching. COPYRIGHT: (C)2009,JPO&INPIT
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