| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a ferroelectric capacitor capable of suppressing leakage current and preventing peeling of a ferroelectric film from an upper electrode, and to provide a manufacturing method for ferroelectric memory device. SOLUTION: The manufacturing method of a ferroelectric capacitor includes a step of forming a first ferroelectric material film 17a on a first electrode film 12a by a metal-organic vapor deposition; a step of forming a precursor film 19 of a second ferroelectric material film on the first ferroelectric material film 17a through chemical solution deposition; a step of heating the precursor film 19 at a temperature that does not form a perovskite crystal structure and dry, and degrease the precursor film 19; a step of forming a second electrode film 14a on the precursor film 19; a step of heating the second electrode film 14a and the precursor film 19 to execute recovery annealing processing for the second electrode film 14a, and at the same time, crystallyzing or phase-shifting the precursor film 19, to form a second ferroelectric material film 18a having a perovskite crystal structure; and a step of forming a ferroelectric capacitor 3 by patterning. COPYRIGHT: (C)2009,JPO&INPIT
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