| 摘要 |
A solid-state imaging device is provided and includes: a substrate; a plurality of photoelectric conversion elements arranged in a one-dimensional or two-dimensional array above the substrate, the plurality of photoelectric conversion elements being divided into a plurality of photoelectric conversion element groups; a semiconductor substrate between the substrate and the plurality of photoelectric conversion elements, corresponding to each of the plurality of photoelectric conversion clement groups; and a signal output section in the semiconductor substrates. The signal output section outputs a signal corresponding to an electric charge generated in each photoelectric conversion elements of a photoelectric conversion element group corresponding to the semiconductor substrate.
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